2SB503 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistors DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·High Power Dissipation- : PC= 25W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device pe

SILICON PNP TRIPLE DIFFUSED MESA TYPE A AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS. FEATURES : • Low Saturation Voltage : V CE ( sat )=-l ,5V (Max. ) (l c=-3A) • Complementary to 2SD877.