डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB502 | PNP Transistor isc Silicon PNP Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min) ·High Power Dissipation-
: PC= 25W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device
pe |
INCHANGE |
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2SB502A | SILICON PNP TRANSISTOR SILICON PNP TRIPLE DIFFUSED MESA TYPE
A
AUDIO POWER AMPLIFIER APPLICATIONS. REGULATOR APPLICATIONS.
FEATURES : • Low Saturation Voltage : V CE ( sat )=-l ,5V (Max. ) (l c=-3A) • Complementary to 2SD877.
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Toshiba |
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