डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1710 | PNP Middle Power Transistor 2SB1710
General purpose amplification (-30V, -1A)
Parameter
VCEO IC
Value
-30V -1A
lFeatures
1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat)≦-350mV at IC=-500mA /IB= |
Rohm |
|
2SB171 | Ge PNP Alloy Junction Transistor | ETC |
|
2SB1714 | Bipolar transistor | Rohm |
|
2SB1710 | PNP Middle Power Transistor | Rohm |
|
2SB1713 | Bipolar transistor | Rohm |
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