डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB171 | Ge PNP Alloy Junction Transistor www.DataSheet4U.com
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ETC |
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2SB1710 | PNP Middle Power Transistor 2SB1710
General purpose amplification (-30V, -1A)
Parameter
VCEO IC
Value
-30V -1A
lFeatures
1)A collector current is large. 2)Collector saturation voltage is low. VCE(sat)≦-350mV at IC=-500mA /IB= |
Rohm |
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2SB1713 | Bipolar transistor 2SB1713
Transistors
-3A / -12V Bipolar transistor
2SB1713
zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
zFeatures 1) Collector current is high. 2) L |
Rohm |
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2SB1714 | Bipolar transistor 2SB1714
Transistors
-2A / -30V Bipolar transistor
2SB1714
zApplications Low frequency amplification, driver zExternal dimensions (Unit : mm)
MPT3
4.5 1.6
0.5
1.5
zFeatures 1) Collector current is high. 2) L |
Rohm |
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