2SB1658 डाटा शीट PDF( Datasheet )

DATA SHEET SILICON TRANSISTOR 2SB1658 AUDIO FREQUENCY AMPLIFIER, SWITCHING PNP SILICON EPITAXIAL TRANSISTORS FEATURES • Low VCE(sat) VCE(sat) = −0.15 V Max (@lC/lB = 1.0 A/50 mA) 3.8 ± 0.2 (0.149) PACK

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1658 DESCRIPTION ·With TO-126 package ·Low collector saturation voltage ·High DC current gain APPLICATION

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector Current -IC= -5A ·High DC Current Gain- : hFE= 150~600@IC= -1A ·Low-Collector Saturation Voltage- : VCE(sat)= -0.15V(Max.)@IC= -1A ·Minimum Lot-

2SB1658 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126F Plastic Package.  特征 / Features 饱和压降低；直流电增

Elektronische Bauelemente 2SB1658 PNP General Purpose Transistor RoHS Compliant Product A suffix of “-C” specifies halogen and lead free FEATURES High Current Amplifier and Switching Applications TO-126

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors 2SB1658 TRANSISTOR (PNP) TO – 126 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless