2SB1655 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max)@ (IC= -2A, IB= -0.2A) ·Wide Area of Safe Op

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SB1655 DESCRIPTION ·With TO-220F package ·Excellent DC current gain characteristics ·Low collector saturation voltage ·Wide area