2SB1649 डाटा शीट PDF( Datasheet )

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= -150V(Min) ·Low-Collector Saturation Voltage: VCE(sat)= -2.5V(Max.)@IC= -10A ·Complement to Type

(7 0 Ω ) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings –150 –150 –5 –15 –1 85(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C 2SB1649 sElect