डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1555 | TRANSISTOR |
Toshiba Semiconductor |
|
2SB1555 | PNP Transistor isc Silicon PNP Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -140V(Min) ·High DC Current Gain-
: hFE= 5000(Min)@IC= -6A ·Complement to Type 2SD2384 ·Minimum Lot |
INCHANGE |
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