2SB1424 डाटा शीट PDF( Datasheet )

Transistors 2SB1424 / 2SA1585S Low VCE(sat) Transistor (−20V, −3A) 2SB1424 / 2SA1585S zFeatures 1) Low VCE(sat). VCE(sat) = −0.2V (Typ.) (IC/IB = −2A / −0.1A) 2) Excellent DC current gain characte

Production specification Low VCE(sat) Transistor(-20V,-3A) FEATURES  Low VCE(SAT)=-0.2V(Typ.) (IC/IB=-2A/-0.1mA). Pb Lead-free  Excellent DC current gain characterisitics.  Complementary the 2SD21

Plastic-Encapsulate Transistors FEATURES • Low VCE(SAT) =-0.2V(Typ.) (IC/IB=-2A/-0.1mA). • Excellent DC current gain characterisitics. • Complementary the 2SD2150. 2SB1424 (PNP) Maximum Ratings (Ta=25

DATA SHEET 2SB1424 PNP GENERAL PURPOSE TRANSISTORS VOLTAGE -20 Volts CURRENT -3.0 Ampere FEATURES z PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS z LOW COLLECTOR-EMITTER SATU

2SB1424 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.  特征 / Features 饱和压降低，极好的直�

2SB1424 Epitaxial Planar PNP Transistors P b Lead(Pb)-Free 1 1. BASE 2. COLLECTOR 3. EMITTER SOT-89 2 3 C) ABSOLUTE MAXIMUM RATINGS (Ta=25% Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Bas

Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulate Transistors 2SB1424 FEATURES Power dissipation PCM: 600 mW (Tamb=25℃) 2. COLLECTOR 3. EMITTER 1 2 3 TRANSISTOR (PNP) SOT-89 1. BASE Collector c