2SB1420 डाटा शीट PDF( Datasheet )

(2 k Ω) (80 Ω) E Darlington sAbsolute maximum ratings Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1420 –120 –120 –6 –16(Pulse–26) –1 80(Tc=25°C) 150 –55 to +150 (Ta=25°C) Unit V V V A A W °C

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000(Min)@IC= -8A ·Minimum Lot-to-Lot variations for robust