2SB1412 डाटा शीट PDF( Datasheet )

Low frequency transistor (−20V,−5A) 2SB1412 zFeatures 1) Low VCE(sat). VCE(sat) = −0.35V (Typ.) (IC/IB = −4A / −0.1A) 2) Excellent DC current gain characteristics. 3) Complements the 2SD2118. zStruct

isc Silicon PNP Power Transistor DESCRIPTION ·Low collector-to-emitter saturation voltage : VCE(sat)= -1.0V(Max)@IC= -4A ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robu

2SB1412 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package.  特征 / Features 饱和压降低,极好的直流�

2SB1412 PNP EPITAXIAL PLANAR TRANSISTOR P b Lead(Pb)-Free 1.BASE 2.COLLECTOR 3.EMITTER 2 3 Features: * Excellent DC Current Gain Characteristics * Low VCE(Sat) 1 D-PAK(TO-252) Mechanical Data: * Case : Mold

UNISONIC TECHNOLOGIES CO., LTD 2SB1412 PNP SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR  DESCRIPTION The UTC 2SB1412 is an epitaxial planar type PNP silicon transistor.  FEATURES * Excellent D

SMD Type Low Frequency Transistor 2SB1412 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). +0.2 9.70 -0.2 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.1 0.80-0.1 +0.1

Elektronische Bauelemente 2SB1412 -5A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Low VCE(sat) D-Pack (