2SB1411 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1411 Switching Applications Hammer Drive, Pulse Motor Drive Applications 2SB1411 Unit: mm • High DC current gain: hFE = 1500 (min) (VCE = −3 V, IC =

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1411 DESCRIPTION ·With TO-220F package ·DARLINGTON ·High DC current gain ·Low collector saturation volta

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain- : hFE= 1500(Min)@ (VCE= -3V, IC= -1A) ·Low Collector Saturation Vol