2SB1390 डाटा शीट PDF( Datasheet )

2SB1390 Silicon PNP Triple Diffused Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter ID 4 kΩ (Typ) 200 Ω (Typ) 3 12 3 2SB1390 Absolute Maximum Ratings (Ta

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -60V(Min) ·High DC Current Gain- : hFE= 1000(Min)@ (VCE= -3V, IC= -4A) ·Minimum Lot-to-Lot variati

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1390 DESCRIPTION ·With TO-220Fa package ·High DC current gain ·Low saturation voltage ·DARLINGTON APPLIC

2SB139040ML 2SB139040ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB139040ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient prot

2SB139060ML 2SB139060ML SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø Ø Ø Ø Ø 2SB139060ML is a schottky barrier diode chips Lb Low power losses, high efficiency; Guard ring construction for transient prot