2SB1383 डाटा शीट PDF( Datasheet )

(2 k Ω) (80 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1383 –120 –120 –6 –25(Pulse–40) –2 120(Tc=25°C) 150 –55 to +150 Unit V V V A A W °

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= -12A, VCE= -4V ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO = -120V(Min) ·Complement to Type 2SD