2SB1382 डाटा शीट PDF( Datasheet )

(2 k Ω) (80 Ω) E Darlington sAbsolute maximum ratings (Ta=25°C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SB1382 –120 –120 –6 –16(Pulse–26) –1 75(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C

isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain- : hFE= 2000( Min.) @(IC= -8A, VCE= -4V) ·Low Collector Saturation V

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Darlington Power Transistors 2SB1382 DESCRIPTION ·With TO-3PML package ·Complement to type 2SD2082 APPLICATIONS ·For chopper r