2SB1375 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1375 Audio Frequency Power Amplifier 2SB1375 Unit: mm • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −2 A, IB = −0.2 A) • High power

isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·Collector Power Dissipation- : PC= 25 W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= -1.

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1375 DESCRIPTION ·With TO-220F package ·Complement to type 2SD2012 ·Low collector saturation voltage: VCE

Silicon PNP Triple Diffused Type FEATURES  Low Saturation Voltage:VCE(sat)=-1.5V(max.) (IC/IB=-2A/-0.2A) Pb  High Power Dissipation:PC=25W(TC=25℃) Lead-free  Complements the 2SD2012. Productio

2SB1375 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package.  特征 / Features 饱和压降低，集电极耗