2SB1261 डाटा शीट PDF( Datasheet )

2SB1261 Transistor(PNP) 1. BASE 1 2. COLLECTOR 3. EMITTER TO-252-2L Features — High hFE hFE=100 to 400 — Low vCE(sat) vCE(sat) ≤0.3V MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

2SB1261 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package.  特征 / Features hFE 线性好，饱和压降低�

PNP Epitaxial Planar Silicon Transistors FEATURES z High hFE hFE=100 to 400. z Low VCE(sat0 VCE(sat)≤0.3V. Pb Lead-free Production specification 2SB1261 ORDERING INFORMATION Type No. Marking 2SB1261 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252 Plastic-Encapsulate Transistors 2SB1261 TRANSISTOR (PNP) TO – 252 FEATURES z Low VCE(sat) z High DC Current Gain MAXIMUM RATINGS (Ta=25℃ unless

isc Silicon NPN Power Transistors DESCRIPTION ·Low Collector Saturation Voltage ·High Power Dissipation- : PC= 10W(Max)@TC=25℃ ·Complement to Type 2SD1899-K ·Minimum Lot-to-Lot variations for robust devi

DATA SHEET SILICON POWER TRANSISTOR 2SB1261-Z PNP SILICON EPITAXIAL TRANSISTOR DESCRIPTION The 2SB1261-Z is designed for Audio Frequency Amplifier and Switching, especially in Hybrid Integrated Circuits. FEA

Transys Electronics L I M I T E D TO-252 Plastic-Encapsulate Transistors 2SB1261-Z FEATURES Power dissipation www.DataSheet4U.com TRANSISTOR (PNP) TO-252 1. BASE PCM: 2 W (Tamb=25℃) 2. COLLECTOR Colle