2SB1218 डाटा शीट PDF( Datasheet )

SMD Type Silicon PNP Epitaxial Planar Type 2SB1218 Transistors IC Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base vol

Product specification 2SB1218 Features High forward current transfer ratio hFE. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitt

PNP Silicon Epitaxial Planar Transistor FEATURES  High forward current transfer ratio hFE  Excellent HFE Linearity.  Complements the 2SD1819A. Pb Lead-free APPLICATIONS  For general purpose ampli

Transistor 2SB1218A Silicon PNP epitaxial planer type For general amplification Complementary to 2SD1819A 2.1±0.1 Unit: mm s Features q q 0.425 1.25±0.1 0.425 High foward current transfer ratio hFE. S-

Transys Electronics L I M I T E D SOT-323 Plastic-Encapsulated Transistors SOT-323 2SB1218A FEATURES Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 25¡ À0. 05 1. 01 R EF w.Data

2SB1218A Elektronische Bauelemente -0.1A , -60V PNP Silicon Epitaxial Paner Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free APPLICATIONS  General Purpose Amplificatio

2SB1 21 8 A TRANSISTOR(PNP) FEATURES  High DC Current Gain  Complementary to 2SD1819A APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO