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2SB1198K | Low-frequency Transistor Transistors
Low-frequency Transistor (*80V, *0.5A)
2SB1198K
FFeatures 1) Low VCE(sat). VCE(sat) = *0.2V (Typ.) (IC / IB = *0.5A / *50mA) 2) High breakdown voltage. BVCEO = *80V 3) Complements the 2SD1782K. FSt |
Rohm |
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2SB1198K | PNP Silicon General Purpose Transistor 2SB1198K
PNP Silicon Elektronische Bauelemente
RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free
A L
3 Top View
General Purpose Transistor
SC-59 Dim A B C D
D
Min 2.70 1.30 1.00 0.35 1.70 |
SeCoS |
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2SB1198K | Silicon PNP transistor 2SB1198K
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions
SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
击穿电压高,饱和压降 |
BLUE ROCKET ELECTRONICS |
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2SB1198K | PNP Transistor 2SB1198K
SOT-23-3L Transistor(PNP)
1. BASE 2. EMITTER 3. COLLECTOR
Features
Low VCE(sat): VCE(sat)=-0.2V(Typ.)(IC=-0.5A,IB=-50mA) High breakdown voltage BVCEO=-80V Complements the 2SD1782K
MAXIMUM R |
DXC |
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2SB1198K | PNP Transistors SMD Type
Transistors
PNP Transistors 2SB1198K
■ Features
● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-80V ● Complementary to 2SD1782K
+0.22.8 -0.1
SOT-23-3
2.9 +0.2 -0. |
Kexin |
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2SB1198K | SILICON PNP TRANSISTOR 2SB1198K(3CG1198K)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于一般中功率放大。
Purpose: Medium power amplifier applications.
特点:击穿电压高,饱和压降低,与 2SD1782K |
LZG |
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2SB1198KFRA | Power Transistor 2SB1198K FRA
Power Transistor (-80V, -500mA)
Parameter
VCEO IC
Value
-80V -500mA
lFeatures
1)Low VCE(sat) VCE(sat)=-200mV(Typ.) (IC/IB=-500mA/-50mA) 2)High breakdown voltage. BVCEO=-80V 3)Complem |
ROHM |
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