2SB1185 डाटा शीट PDF( Datasheet )

Transistors Power Transistor (*60V, *3A) 2SB1184 / 2SB1243 / 2SB1185 FFeatures 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1760 / 2SD1864 / 2SD1762. FStructure Epitax

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1185 DESCRIPTION ·With TO-220Fa package ·Low collector saturation votlage ·Complement to type 2SD1762 APP

isc Silicon PNP Power Transistor 2SB1185 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min.) ·Good Linearity of hFE ·Low Collector Saturation Voltage- : VCE(sat)= -1.0V(Max.)@ IC= -2A

2SB1185 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220F 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220F Plastic Package.  特征 / Features VCE(sat)低，与 2SD1762 互�

Power Transistor FEATURES  Low VCE(sat). VCE(sat)=-0.5V(TYP.) (IC/IB=-2A/-0.2A)  Complements the 2SD1762. Pb Lead-free Production specification 2SB1185 TO-220AB MAXIMUM RATING operating temperature ra