डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1100 | Silicon PNP Power Transistors isc Silicon PNP Darlington Power Transistor
2SB1100
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -100V(Min) ·High DC Current Gain-
: hFE= 1000(Min)@ IC= -10A ·Complement to Type 2SD1591 · |
Inchange Semiconductor |
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2SB1100 | Silicon PNP Power Transistors | Inchange Semiconductor |
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2SB1109 | PNP Transistor | Hitachi Semiconductor |
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2SB1108 | PNP Transistor | Panasonic Semiconductor |
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2SB1106 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1101 | PNP Transistor | Hitachi Semiconductor |
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2SB1102 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1101 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1103 | PNP Transistor | Hitachi Semiconductor |
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2SB1101 | PNP Transistor | INCHANGE |
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2SB1105 | SILICON POWER TRANSISTOR | SavantIC |
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