डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1020 | PNP Transistor isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·High DC C urrent Gain-
: hFE= 2000(Min.)@IC= -3A ·Low Collector Saturation Voltage-
: VCE(sat)= -1.5V(Max)@IC= -3A ·Good Linearity of hFE ·Compleme |
INCHANGE |
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2SB1020A | Silicon PNP Transistor 2SB1020A
TOSHIBA Transistor Silicon PNP Triple Diffused Type (Darlington Power)
2SB1020A
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE |
Toshiba Semiconductor |
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