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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1019 | SILICON PNP TRANSISTOR 9
:
2SB1 01
1«
SILICON PNP TRIPLE DIFFUSED TYPE (PCT PROCESS)
HIGH CURRENT SWITCHING APPLICATIONS.
Unit in mm
POWER AMPLIFIER APPLICATIONS.
FEATURES . Low Collector Saturation Vol tage
: VcE(sat)=-0,4V(Max |
Toshiba |
|
2SB1019 | SILICON POWER TRANSISTOR SavantIC Semiconductor
www.DataSheet4U.com
Product Specification
Silicon PNP Power Transistors
2SB1019
DESCRIPTION ·With TO-220Fa package ·Low saturation voltage ·Complement to type 2SD1412 APPLICATIONS |
SavantIC |
|
2SB1019 | PNP Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Low Collector Saturation Voltage-
: VCE(sat)= -0.4V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1412 ·Minimum Lot-to-Lot variations for robust d |
INCHANGE |
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