डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SB1016A | Silicon PNP Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type
2SB1016A
Power Amplifier Applications
2SB1016A
Unit: mm
• High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2 |
Toshiba Semiconductor |
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2SB1016 | SILICON POWER TRANSISTOR | SavantIC |
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2SB1016A | Silicon PNP Transistor | Toshiba Semiconductor |
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2SB1016 | PNP Transistor | INCHANGE |
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2SB1016 | SILICON PNP TRANSISTOR | Toshiba |
www.DataSheet.in | 2017 | संपर्क |