2SB1016 डाटा शीट PDF( Datasheet )

: SILICON PNP TRIPLE DIFFUSED TYPE — POWER AMPLIFIER APPLICATIONS. FEATURES . High Breakdown Voltage : V^g =-100V (3 . Low Collector-Emitter Satura tion Voltage = VCE(sat) =-2.0V(Max.) . Complement

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1016 DESCRIPTION ·With TO-220Fa package ·High breakdown voltage ·Low collector saturation voltage ·Compl

isc Silicon PNP Power Transistor 2SB1016 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -2.0 V(Max)@IC= -4A ·Good Linearity of hFE ·Complement to Type 2SD1407 ·Minimum Lot-to-Lot variations fo

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm • High breakdown voltage: VCEO = −100 V • Low collector-emitter saturation voltage: VCE (sat) = −2