2SA950 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 2SA950 Audio Power Amplifier Applications Unit: mm · High hFE: hFE = 100~320 · 1 W output applications · Complementary to 2SC2120 Maxim

Elektronische Bauelemente 2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  1W output applications  Complementa

Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA950 FEATURE Power dissipation TRANSISTOR (PNP) TO-92 DataSheet4U.com 1. EMITTER PCM : 0.6 W (Tamb=25℃) Collector current A IC

ST 2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transis

2SA950 TRANSISTOR (PNP) TO-92 FEATURES y 1W output applications y complementary to 2SC2120 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage -35 VCEO

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA950 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for low-frequency power amplifier applications. Pinning 1 = Emitter

2SA950 PNP Silicon Epitaxial Planar Transistor for audio power amplifier applications. The transistor is subdivided into two group, O and Y according to its DC current gain. On special request, these transistor