डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA843 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= -150V(Min) ·DC Current Gain
: hFE= 60-200@ IC= -0.4A ·Complement to Type 2SC1683 ·Minimum Lot-to-Lot variations |
Inchange Semiconductor |
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2SA841 | Silicon PNP Transistor | ETC |
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2SA844 | Silicon PNP Epitaxial Transistor | Hitachi Semiconductor |
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2SA843 | Silicon PNP Power Transistor | Inchange Semiconductor |
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2SA844 | Silicon PNP Epitaxial Transistor | Renesas |
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2SA844-E | PNP Plastic Encapsulated Transistor | SeCoS |
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2SA844 | PNP Transistor | JCET |
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2SA844-C | PNP Plastic Encapsulated Transistor | SeCoS |
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2SA844-D | PNP Plastic Encapsulated Transistor | SeCoS |
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2SA844 | PNP Plastic Encapsulated Transistor | SeCoS |
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2SA844 | Silicon PNP transistor | BLUE ROCKET ELECTRONICS |
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