डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1937 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR TOSHIBA Transistor Silicon PNP Triple Diffused Type
2SA1937
High-Voltage Switching Applications
2SA1937
Unit: mm
• High voltage: VCEO = −600 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symb |
Toshiba Semiconductor |
|
2SA1930 | PNP Transistor | Toshiba Semiconductor |
|
2SA1932 | Silicon PNP Transistor | Toshiba Semiconductor |
|
2SA1939 | Silicon PNP Transistor | Toshiba Semiconductor |
|
2SA1931 | Silicon PNP Transistor | Toshiba |
|
2SA1937 | SILICON PNP TRIPLE DIFFUSED TYPE TRANSISTOR | Toshiba Semiconductor |
|
2SA1934 | Silicon PNP Epitaxial Type Transistor | Toshiba Semiconductor |
|
2SA1930 | Silicon PNP Power Transistor | Inchange Semiconductor |
|
2SA1930I | Silicon PNP transistor | BLUE ROCKET ELECTRONICS |
|
2SA1930 | SILICON PNP TRANSISTOR | LZG |
|
2SA1939 | Power Transistor | Inchange Semiconductor |
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