डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1832 | Silicon PNP Transistor Bipolar Transistors Silicon PNP Epitaxial Type
2SA1832
1. Applications
• Low-Frequency Amplifiers
2. Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) High voltage: VCEO = -50 V |
Toshiba Semiconductor |
|
2SA1832 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-523 Plastic-Encapsulate Transistors
2SA1832 TRANSISTOR (PNP)
SOT-523
FEATURES z High voltage and high current z Excellent hFE linearity z Complementary |
JCST |
|
2SA1832 | Plastic-Encapsulate Transistors Plastic-Encapsulate Transistors
FEATURES
High voltage and high current. Excellent hFE linearity. High hFE. Complementary to 2sc4738. Small package.
Pb
Lead-free
Production specification
2 |
GME |
|
2SA1832 | PNP Transistor 2SA1832
Elektronische Bauelemente -0.15A , -50V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High Voltage and High Current |
Secos |
|
2SA1832 | PNP TRANSISTOR 2SA1832
PNP TRANSISTOR
P b Lead(Pb)-Free
FEATURES: * High voltage and high current * Excellent hFE linearity * Complementary to 2SC4738
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Parameter Symbol VCBO VC |
WEITRON |
|
2SA1832 | PNP TRANSISTOR RoHS
2SA1832
2SA1832
FEATURES Power dissipation PCM
SOT-523
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
: 0.1
W (Tamb=25℃)
Collector current ICM : -0.15 A Collector-base voltage V(BR)CBO : -50 V Ope |
WEJ |
|
2SA1832 | Plastic-Encapsulate Transistors Production specification
Plastic-Encapsulate Transistors
FEATURES
z z z z z High voltage and high current Excellent hFE linearity High hFE Complementary to 2sc4738 Small package
2SA1832
Pb
Lead-free
SOT-523 |
TOPSKY |
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