डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1736 | PNP Transistor TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
2SA1736
Power Amplifier Applications Power Switching Applications
2SA1736
Unit: mm
• Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 |
Toshiba Semiconductor |
|
2SA1736 | PNP Transistor PNP Epitaxial Planar Silicon Transistor
FEATURES
z Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1.5 A)
Pb
Lead-free
z High speed switching time: tstg = 0.2 μs (typ.)
z Complementary to 2SC45 |
GME |
|
2SA1736-HF | PNP Transistors SMD Type
PNP Transistors 2SA1736-HF
Transistors
■ Features
● Low saturation voltage ● High speed switching time
● Small flat package ● PC = 1.0 to 2.0 W (mounted on a ceramic substrate) ● Complem |
Kexin |
www.DataSheet.in | 2017 | संपर्क |