2SA1700 डाटा शीट PDF( Datasheet )

isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage ·Low Collector-Emitter Saturation Voltage ·High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ ·Minimum Lot-to-Lot variations fo

2SA1700 Rev.E May.-2016 DATA SHEET 描述 / Descriptions TO-252 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-252 Plastic Package. 特征 / Features 高击穿电压，极好的放大�

1.BASE 2.COLLECTOR 3.EMITTER 2SA1700(PNP) TO-251/TO-252-2L Transistor TO-251 1 23 Features High breakdown voltage Adoption of MBIT process Excellent hFE linearity MAXIMUM RATINGS (TA=25℃ unless otherwise

PNP Epitaxial Planar Silicon Transistor FEATURES z High breakdown voltage. z Adoption of MBIT process. z Excellent hFE linearity. Pb Lead-free Production specification 2SA1700 TO-251 TO-252 MAXIMUM RATING

UNISONIC TECHNOLOGIES CO., LTD 2SA1700 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE DRIVER APPLICATION  FEATURES * High breakdown voltage. * Excellent hFE linearity.  ORDERING INFORMATION Ordering