डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2SA1611 | PNP Transistor JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T
SOT-323 Plastic-Encapsulate Transistors
2SA1611 TRANSISTOR (PNP)
FEATURES High DC Current Gain High Voltage Complementary to 2SC4177
SOT |
JCET |
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2SA1611 | PNP Silicon Transistor PNP Silicon Epitaxial Planar Transistor
FEATURES
High voltage VCEO=-50V. Excellent HFE Linearity. High DC current gain : hFE=200 typ. Complementary to 2SC4177.
Pb
Lead-free
Production specifi |
GME |
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2SA1611 | AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER PNP SILICON EPITAXIAL TRANSISTOR |
NEC |
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2SA1611 | Transistor Transys
Electronics
L I M I T E D
SOT-323 Plastic-Encapsulated Transistors
SOT-323
2SA1611
FEATURES Power dissipation PCM
TRANSISTOR (PNP)
1. BASE 2. EMITTER 3. COLLECTOR
1. 25¡ À0. 05
1. 01 R EF
: 0.15
|
TRANSYS |
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2SA1611 | Transistor SMD Type
PNP Silicon Epitaxia 2SA1611
Transistors IC
Features
High DC Current Gain. High Voltage.
1 Emitter 2 Base 3 Collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emi |
Kexin |
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2SA1611 | PNP Silicon Plastic Encapsulated Transistor 2SA1611
Elektronische Bauelemente -0.1A , -60V PNP Silicon Plastic Encapsulated Transistor
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
FEATURES
High DC Current Gain High |
SeCoS |
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2SA1611 | Transistor 2SA1 61 1
TRANSISTOR(PNP)
FEATURES High DC Current Gain High Voltage Complementary to 2SC4177 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Co |
Jin Yu Semiconductor |
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