| No. | Partie # | Fabricant | Description | Fiche Technique |
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Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.6pF (NPN), 2.1pF (PNP). · Complementary pair with the 2SA1404/2SC3598. · Adoption of FBET proces |
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Sanyo |
2SA1404 · High fT : fT typ=500MHz. · High breakdown voltage : VCEO≥120V. · Small reverse transfer capacitance and excellent high-frequency characteristic : Cre=1.6pF (NPN), 2.1pF (PNP). · Complementary pair with the 2SA1404/2SC3598. · Adoption of FBET proces |
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