2SA1213 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Power Switching Applications 2SA1213 Unit: mm • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1

Silicon Planar Epitaxial Transistor FEATURES z Low saturation voltage z High speed switching time Pb Lead-free z Small flat package z PC=1.0 to 2.0W(mounted on ceramic substrate) z Complementary to 2SC2873

SMD Type Transistors Power Switching Applications 2SA1213 Features Low Saturation Voltage: VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time: tstg = 1.0ìs(typ.) Small Flat Package PC = 1 to 2W (mou

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR (PNP) FEATURES z Complementary to 2SC2873 z Small Flat Package z Power Amplifier and Switching Ap

SOT-89 Plastic-Encapsulate Transistors 2SA1213 TRANSISTOR (PNP) FEATURES z Small Flat Package z Power Amplifier and Switching Applications z Low Saturation Voltage z High Speed Switching Time z Pb-Free packag

2SA1213 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-89 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-89 Plastic Package.  特征 / Features 饱和压降低,高速开关时�