2SA1015 डाटा शीट PDF( Datasheet )

2SA1015 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into three groups, O, Y and G, L , according to its DC current gain. As complementary ty

2SA1015(L) TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1015(L) Audio Frequency Amplifier Applications Low Noise Amplifier Applications • High voltage and high current: VCEO = −50 V (min

SMD Type TransistIoCrs PNP Transistor 2SA1015 Features High voltage and high current VCEO:=-50V(min.),IC=-150mA(max.) Low niose: NF=1dB(Typ.) at f=1KHz +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.9

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA1015 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplificatio

UNISONIC TECHNOLOGIES CO., LTD 2SA1015 PNP SILICON TRANSISTOR LOW FREQUENCY PNP AMPLIFIER TRANSISTOR  FEATURES * Collector-Emitter Voltage: BVCEO=-50V * Collector Current up to 150mA * High hFE Linearity

TIGER ELECTRONIC CO.,LTD 2SA1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings • Ma

` isc Silicon PNP Transistor DESCRIPTION ·High Voltage and High Current Vceo=-50V(Min.），Ic=-150mA(Max) ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SC1815 ·Minimum Lot-to-Lot variations fo