2SA1013 डाटा शीट PDF( Datasheet )

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2SA1013 Unit: mm • High voltage: VCEO = −160 V • Large

isc Silicon PNP Transistor INCHANGE Semiconductor 2SA1013 DESCRIPTION ·High Voltage and High Current Vceo=-160V(Min.） ·Excellent hFE Linearity ·Low Noise ·Complement to Type 2SC2383 ·Minimum Lot-to-Lot

SMD Type PNP Transistors 2SA1013 Transistors ■ Features ● High voltage ● Large continuous collector current capability 1.70 0.1 0.42 0.1 0.46 0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter C

ST 2SA1013 PNP Silicon Epitaxial Planar Transistor The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. On special request, these transistors can be manufactured in diff

2SA1013 Elektronische Bauelemente -1A, -160V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE High Voltage：VCEO= -160V Large Continuous C

UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR  DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced techn

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/Rohs Compliant ("P"Suffix d