2SA1012 डाटा शीट PDF( Datasheet )

PNP Epitaxial Silicon Transistor FEATURES  Low Collector Saturation Voltage. VCE(sat)=-0.4V(Max.)at IC=-3A  Complements the 2SC2562. Pb Lead-free  High Speed Switching Time:tstg=1.0µs(Typ.) Produ

2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 2

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION  FEATURES *Low Collector Saturation Voltage VCE(SAT)=-0.4V(max.) At IC=-3A *High Speed Switching Time: tS=

isc Silicon PNP Power Transistor 2SA1012 DESCRIPTION ·Low Collector Saturation Voltage :VCE(sat)= -0.4(V)(Max)@IC= -3A ·High Switching Speed ·Complement to Type 2SC2562 ·100% avalanche tested ·Minimum Lo

2SA1012 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package.  特征 / Features 饱和压降低,开关速度快,

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SA1012 Features • Capable of 25 Watts of Power Dissi