2PG401 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| 2PG401 | Insulated Gate Bipolar Transistor IGBTs
2PG401
Insulated Gate Bipolar Transistor
s Features
q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Allowing to provide with the surface mounting package
7.2 |
 Panasonic Semiconductor |
|
| 2PG401 | Insulated Gate Bipolar Transistor | Panasonic Semiconductor |
|
| 2PG402 | Insulated Gate Bipolar Transistor | Panasonic Semiconductor |
शेयर लिंक :
[1]
www.DataSheet.in | 2017 | संपर्क |