| No. | Partie # | Fabricant | Description | Fiche Technique |
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Motorola |
PNP germanium epitaxial mesa transistor = 25°C unless otherwise notedl Characteristic Collector-Base Breakdown Voltage (Ic =100 fJ.Adc, IE =0) Collector-Emitter Breakdown Voltage (IC=100 J1Adc, VEB=O) Emitter-Base Breakdown Voltage (IE = 100 fJ. Adc, IC = 0) Collector Latch-up Voltage (se |
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