No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
|
|
GeneSiC |
OFF Silicon Carbide Junction Transistor 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Tem |
|
|
|
GeneSiC |
Junction Transistor 225°C maximum operating temperature Electrically Isolated Base Plate Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity Temperature Independent Switching Performance Low Output Capacitance Positive Tem |
|