2N7002W डाटा शीट PDF( Datasheet )

Production specification N-Channel Enhancement Mode Field Effect Transistor 2N7002W FEATURES  Low On-Resistance。  Low Gate Threshold Voltage.  Low Input Capacitance.  Fast Switching Speed.  L

Elektronische Bauelemente 2N7002W 115 mAMPS, 60VOLTS, RDS(on)=7.5 Small Signal MOSFET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free N–Channel SOT–323 MAXIMUM RATINGS Rating Sym

2N7002W — N-Channel Enhancement Mode Field Effect Transistor October 2007 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features • Low On-Resistance • Low Gate Threshold Voltage • Low Inpu

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W V(BR)DSS 60 V MOSFET (N-Channel) RDS(on)MAX   5Ω@10V  7Ω@5V   ID 115mA SOT-323 1. GATE 2. SOURCE 3. DRAI

2N7002W N-Channel MOSFET 3 DRAIN 3 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Output Capacitance : 11PF *Low Threshold Voltage :1 .5V(TYE) *Fast Switching Speed : 7ns 1 GATE 2 SO

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2N7002W, 2V7002W Small Signal MOSFET 60 V, 340 mA, Single, N−Channel, SC−70 Features • ESD Protected • Low RDS(on) • Small Footprint Surface Mount Package • 2V Prefix for Automotive and Other Appl