2N7002KDW डाटा शीट PDF( Datasheet )

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETS 2N7002KDW N-channel MOSFET V(BR)DSS 60 V RDS(on)MAX  5Ω@10V  5.3Ω@4.5V   ID 340mA SOT-363  6 5 4 1 2 3

2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell Des

Elektronische Bauelemente 2N7002KDW 115mA, 60V Dual N-Channel Small Signal MOSFET FEATURES  Low on-resistance  Fast switching Speed  Low-voltage drive  Easily designed drive circuits  ESD prote

Dual N-Channel MOSFET P b Lead(Pb)-Free Features: * Low On-Resistance * Fast Switching Speed * Low-voltage drive * Easily designed drive circuits * ESD Protected:2000V 2N7002KDW 6 54 123 SOT-363(SC-88) 6 54 D2

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2N7002KDW-AU 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES • RDS(ON), VGS@10V,IDS@500mA=3Ω • RDS(ON), [email protected],IDS@200mA=4Ω • Advanced Trench Process Technology • High Density Cell De

Enhancement Mode MOSFET (Double N-Channel) 2N7002KDWS Enhancement Mode MOSFET (Double N-Channel) Features  Advanced Trench Process Technology  High density cell design for low RDS(ON)  Very low leakag