2N7002DW डाटा शीट PDF( Datasheet )

Product Summary BVDSS 60V RDS(ON) Max 7.5Ω @ VGS = 5V ID Max TA = +25°C 0.23A Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superio

Field Effect Transistor N-Channel, Enhancement Mode 2N7002DW Features • Dual N−Channel MOSFET • Low On−Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed •

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate MOSFETs 2N7002DW V(BR)DSS 60 V Dual N-channel MOSFET RDS(on)MAX  5Ω@10V  7Ω@5V   FEATURE z High density cell design for lo

2N7002DW Features • High Density Cell Design For Low RDS(ON) • Voltage Controlled Small Signal Switch • Epoxy Meets UL 94 V-0 Flammability Rating • Moisture Sensitivity Level 1 • Halogen Free. “Gre

2N7002DW Dual N-Channel MOSFET 3 2 1 6 5 4 Features: *Low On-Resistance : 7.5 Ω *Low Input Capacitance: 22PF *Low Out put Capacitance : 11PF *Low Threshole :1 .5V(TYE) *Fast Switching Speed : 11ns 1 2 3

2N7002DW — N-Channel Enhancement Mode Field Effect Transistor January 2015 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features • Dual N-Channel MOSFET • Low On-Resistance • Low Gate

OptiMOS™ Small-Signal-Transistor Features • Dual N-channel • Enhancement mode • Logic level • Avalanche rated • Fast switching • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant