2N700 डाटा शीट PDF( Datasheet )

2N700,A (GERMANIUM) CASE 21 (TO-17) PNP germanium mesa transistors for oscillator, frequency multiplier, wide- band mixer and wide-band amplifier applications. MAXIMUM RATINGS Rating Collector-Base Voltage C

2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Features • Free from Secondary Breakdown • Low Power Drive Requirement • Ease of Paralleling • Low CISS and Fast Switching Speeds • Excellent Ther

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N7000/D TMOS FET Transistor N–Channel — Enhancement 3 DRAIN 2 GATE 1 SOURCE 2N7000 Motorola Preferred Device MAXIMUM RATINGS Rating Drain S

DISCRETE SEMICONDUCTORS DATA SHEET 2N7000 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product spec

2N7000/2N7002, VQ1000J/P, BS170 Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY Part Number 2N7000 2N7002 VQ1000J VQ1000P BS170 60 V(BR)DSS Min (V) rDS(on) Max (W) 5 @ VGS = 10 V 7.5 @ VGS = 10

2N7000 N−Ch, Enhancement Mode Field Effect Transistor TO−92 Type Package D Features: D High Density Cell Design for Low RDS(ON) D Voltage Controlled Small Signal Switch D Rugged and Reliable D High Satura

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor 2N7000 ·FEATURES ·With TO-92 package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot v