2N6796 डाटा शीट PDF( Datasheet )

2N6796 MECHANICAL DATA Dimensions in mm (inches) 8 .8 9 (0 .3 5 ) 9 .4 0 (0 .3 7 ) 7 .7 5 (0 .3 0 5 ) 8 .5 1 (0 .3 3 5 ) TMOS FET TRANSISTOR N – CHANNEL 6 .1 0 (0 .2 4 0 ) 6 .6 0 (0 .2 6 0 ) 1 2 .7 0 (0

2N6796 Data Sheet November 1998 File Number 1594.2 8A, 100V, 0.180 Ohm, N-Channel Power MOSFET The 2N6796 is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications

2N6796, 2N6798, 2N6800, 2N6802 Available on commercial versions N-CHANNEL MOSFET Qualified per MIL-PRF-19500/557 DESCRIPTION This family of switching transistors is military qualified up to the JANTXV level

2N6796LCC4 MECHANICAL DATA Dimensions in mm (inches) 1.27 (0.050) 1.07 (0.040) 9.14 (0.360) 8.64 (0.340) 12 13 14 15 16 1.39 (0.055) 1.02 (0.040) ≈ 2.16 (0.085) N-CHANNEL POWER MOSFET VDSS = 100V = 7.4A