डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR 2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
s s s
SGS-THOMSON PREFERRED SALESTYPE PNP DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS: GENERAL PURPOSE SWITCHING s GENERAL PURPOSE SW |
STMicroelectronics |
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2N6668 | DARLINGTON POWER TRANSISTORS www.DataSheet4U.com
2N6667, 2N6668 Darlington Silicon Power Transistors
Designed for general−purpose amplifier and low speed switching applications.
• High DC Current Gain − • • • • • •
hFE |
ON Semiconductor |
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2N6668 | DARLINGTON POWER TRANSISTORS www.DataSheet4U.com
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N6667/D
2N6609 (See 2N3773)
Darlington Silicon Power Transistors
. . . designed for general–purpose amplifier and low spe |
Motorola |
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2N6668 | Silicon PNP Transistors 2N6666, 2N6667, 2N6668 Silicon PNP Transistors Darlington Power Amplifier TO−220 Type Package
Description: The 2N6666, 2N6667, and 2N6668 are silicon PNP Darlington power transistors in a TO−220 type packa |
NTE |
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2N6668 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2N6668
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A ·Collector-Emitter Sustaining Voltage-
: VCE |
Inchange Semiconductor |
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