डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
2N657 | NPN Transistor 2N656 (SILICON) 2N657
NPN SILICON ANNULAR TRANSISTORS
. NPN silicon annular transistor designed for small-signal amplifier and general purpose switching applications.
• High Collector·Emitter Breakdown Volt |
Motorola |
|
2N657 | NPN SILICON PLANAR TRANSISTOR Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR TRANSISTOR
2N657
TO-39 Metal Can Package
General Purpose Transistor.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unles |
CDIL |
|
2N6573 | Nipolar NPN Device 2N6573
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
www.Dat |
Semelab Plc |
|
2N6573 | NPN Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO = 250V(Min.) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations |
INCHANGE |
|
2N6574 | Bipolar NPN Device 2N6574
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
www.Dat |
Seme LAB |
|
2N6574 | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO = 275V(Min.) ·Fast Switching Speed ·High Current Capability ·100% avalanche tested ·Minimum Lot-to-Lot variations |
Inchange Semiconductor |
|
2N6575 | Bipolar NPN Device 2N6575
Dimensions in mm (inches).
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
www.Dat |
Seme LAB |
www.DataSheet.in | 2017 | संपर्क |