2N6517 डाटा शीट PDF( Datasheet )

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 FEATURES * 350 Volt VCEO * Gain of 15 at IC=100mA 2N6517 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Vol

2N6517 — NPN Epitaxial Silicon Transistor 2N6517 NPN Epitaxial Silicon Transistor August 2010 Features • High Voltage Transistor • Collector Dissipation: PC(max) = 625mW • Complement to 2N6520 • Su

MCC Features
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# NPN 2N6515, 2N6517 PNP 2N6519, 2N6520 High Voltage Transistor 625mW l Through H

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRAN

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6515/D High Voltage Transistors COLLECTOR 3 COLLECTOR 3 2 BASE NPN 1 EMITTER 2 BASE PNP 1 EMITTER NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAX

2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series devices are co