2N6439 डाटा शीट PDF( Datasheet )

MOTOROLA The RF Line SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 40

SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6439/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz fre

2N6439 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N6439 is a Common Emitter Device Designed For Large signal output amplifier stages in the 225-400 MHz range. FEATURES INCLUDE: • Internal Input Ma

HG Semiconductors The RF Line 2N6439HG RF POWER TRANSISTOR ROHS Compliance,Silicon NPN POWER TRANSISTOR . . . designed primarily for wideband large–signal output amplifier stages in the 225 to 400 MHz frequ

2N6439 The RF Line NPN Silicon Power Transistor 60 W, 225 - 400 MHz, 28 V  Guaranteed performance in 225 to 400 MHz broadband amplifier @ 28 Vdc Output power = 60 W over 225 to 400 MHz band Minimum gain = 7.