2N6284 डाटा शीट PDF( Datasheet )

2N6284 2N6287 Complementary power Darlington transistors Features ■ Complementary transistors in monolithic Darlington configuration ■ Integrated collector-emitter antiparallel diode t(s)Applications uc

2N6284 (NPN); 2N6286, 2N6287 (PNP) Preferred Device Darlington Complementary Silicon Power Transistors These packages are designed for general−purpose amplifier and low−frequency switching applications. Fea

www.DataSheet4U.com MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6282/D Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–frequency

2N6283 & 2N6284 NPN Darlington Power Silicon Transistor Features  Available in JAN, JANTX, JANTXV per MIL-PRF-19500/371  TO-3 (TO-204AA) Package Rev. V1 Electrical Characteristics Parameter Off Characte

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-3 package ·Complement to type 2N6285/6286/6287 ·High DC current gain ·DARLINGTON APPLICATIONS ·For use in g

2N6282 – 2N6283 – 2N6284 NPN SILICON DARLINGTON POWER TRANSISTOR The 2N6282, 2N6283 and 2N6284 are mounted in TO-3 metal package. They are designed for use in general–purpose amplifier and low–frequency

isc Silicon NPN Darlingtion Power Transistor DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain- hFE = 750 (Min) @ IC =10 Adc ·Collector-Emitter Sustaining Voltage- VCEO(SUS)=100V(Min)